Sanyo Electric 3LP01M
P-Channel Silicon MOSFET
| Part No. | 3LP01M |
|---|---|
| Datasheet | 3LP01M Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2158 [3LP01M] 0.425 0.3 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 0.2 1 : Gate 2 : Source 3 : Drain SANYO : MCP Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -30 ± 10 --0.1 --0.4 0.15 150 --55 to +150 Unit V V A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=± 8V, VDS=0 VDS=-10V, ID=--100µA VDS=-10V, ID=--50mA Ratings min --30 --10 ± 10 --0.4 80 110 --1.4 typ max Unit V µA µA V mS Continued on next page.
