Sanyo Electric 3LP03M
P-Channel Silicon MOSFET
| Part No. | 3LP03M |
|---|---|
| Datasheet | 3LP03M Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
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● General-Purpose Switching Device
APPLICATIONS
Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source]. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage (*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -30 -10 --0.25 --1 0.15 150 --55 to +150 Unit V V A A W °C °C (*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.ELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Tr...
