Sanyo Electric 5LP01N
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
| Part No. | 5LP01N |
|---|---|
| Datasheet | 5LP01N Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
●●
● Package Dimensions unit : mm 2178 [5LP01N] 5.0 4.0 4.0 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 1 : Source 2 : Drain 3 : Gate 1.3 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1.3 SANYO : NP Conditions Ratings -50 ±10 --0.07 --0.28 0.4 150 --55 to +150 Unit V V A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=--1mA, VGS=0 VDS=-50V, VGS=0 VGS=± 8V, VDS=0 VDS=-10V, ID=-100µA Ratings min --50 10 ±10 -0.4 --1.4 typ max Unit V µA µA V Marking : XB Continued on next page. Any and all SANYO products described or...
