6LN04SS Datasheet | SANYO

Features - 1.5V drive. - Halogen Free pliance. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on glass epoxy substrate (145mm✕80mm✕1.6mm) Electrical Characteristics at Ta=25°C Ratings 60 ±10 200 800 0.15 150 --55 to +150 Unit V V m A m A W °C °C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : YS Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss ID=1m A, VGS=0V VDS=60V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100μA VDS=10V, ID=100m A ID=100m A, VGS=4V ID=50m A, VGS=2.5V ID=10m A, VGS=1.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz min 60 0.4 280 Ratings typ max Unit 1 μA ±10 μA 1.3 V 480 m S 2.2 2.9...