Datasheet4U Logo Datasheet4U.com

A1433 - 2SA1433

Key Features

  • High fT (Gain-Bandwidth Product).
  • Small reverse transfer capacitance (Cre=1.3pF).
  • Adoption of FBET process. Package Dimensions unit:mm 2006A [2SA1433] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Electrical Characteristi.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
A1430 2SA1430 Toshiba Semiconductor
A1431 2SA1431 Toshiba Semiconductor
A1432 2SA1432 Toshiba Semiconductor
A1407 2SA1407 Sanyo Semicon Device
A1408 2SA1408 Toshiba Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
A1434 2SA1434
A1435 2SA1435
A1436 2SA1436
A1437 2SA1437
A1402 2SA1402

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features · High fT (Gain-Bandwidth Product). · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process.