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A1450 - 2SA1450

Key Features

  • Adoption of FBET process.
  • AF amp, AF power amp.
  • High breakdown voltage : VCEO>80V Package Dimensions unit:mm 2003B [2SA1450/2SC3708] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SA1450 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VE.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
A1402 2SA1402
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A1404 2SA1404
A1405 2SA1405
A1406 2SA1406

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features · Adoption of FBET process. · AF amp, AF power amp. · High breakdown voltage : VCEO>80V Package Dimensions unit:mm 2003B [2SA1450/2SC3708] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.