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A1575 - 2SA1575

Features

  • High fT.
  • High breakdown voltage.
  • Small reverse transfer capacitance and excellent high-frequency characteristic.
  • Adoption of FBET process. Package Dimensions unit:mm 2038 [2SA1575/2SC4080] E : Emitter C : Collector B : Base ( ) : 2SA1575 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation VCBO VCEO VEBO.

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Other Datasheets by SANYO (now Panasonic)

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A1507 2SA1507
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Features · High fT. · High breakdown voltage. · Small reverse transfer capacitance and excellent high-frequency characteristic. · Adoption of FBET process. Package Dimensions unit:mm 2038 [2SA1575/2SC4080] E : Emitter C : Collector B : Base ( ) : 2SA1575 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Conditions Mounted on ceramic board (250mm2×0.
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