Sanyo Electric ATP301
P-Channel Silicon MOSFET
| Part No. | ATP301 |
|---|---|
| Datasheet | ATP301 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
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● P-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
Avalanche resistance guarantee. 10V drive. Halogen free compliance. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --28 --112 70 150 --55 to +150 54 --28 Unit V V A A W °C °C mJ A Note : *1 VDD=--30V, L=100μH, IAV=--28A *2 L≤100μH, Single pulseELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions -1mA, VGS=0V ID=-100V, VGS=0V VDS=VGS=±16V, VDS=0V -10V, ID=-1mA VDS=--2.0 Ratings min --100 -1 ±10 --3.5 typ max Unit V μA μA V Marking : ATP301 Continued on next page.
