Sanyo Electric ATP302
P-Channel Silicon MOSFET
| Part No. | ATP302 |
|---|---|
| Datasheet | ATP302 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
●● P-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
Avalanche resistance guarantee. Halogen free compliance. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --70 --280 70 150 --55 to +150 197 --42 Unit V V A A W °C °C mJ A Note : *1 VDD=--36V, L=100μH, IAV=--42A *2 L≤100μH, Single pulseELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | Conditions -1mA, VGS=0V ID=-60V, VGS=0V VDS=VGS=±16V, VDS=0V -10V, ID=-1mA VDS=-10V, ID=--35A VDS=--1.2 75 Ratings min --60 --10 ±10 --2.6 typ max Unit V μA μA V S Marking : ATP302 Continued on next page.
