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B1122 - 2SB1122

Key Features

  • Adoption of FBET process.
  • Very small size making it easy to provide high- density hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1122/2SD1622] E : Emitter C : Collector B : Base ( ) : 2SB1122 Specifications SANYO : PCP (Bottom view) Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
B1120 2SB1120
B1121 2SB1121
B1123 2SB1123
B1125 2SB1125
B1126 2SB1126

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:2040A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1122/2SD1622 Low-Frequency Power Amplifier Applications Applications · Voltage regulators relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET process.. · Very small size making it easy to provide high- density hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1122/2SD1622] E : Emitter C : Collector B : Base ( ) : 2SB1122 Specifications SANYO : PCP (Bottom view) Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on ceramic board (250mm2×0.