B1131 - 2SB1131

Features

Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity.
Fast switching time. Package Dimensions unit:mm 2006A [2SB1131] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta =.

Sanyo

Datasheet Details

Part number	B1131
Manufacturer	Sanyo
File Size	88.38 KB
Description	2SB1131
Datasheet	B1131 Datasheet
Additional preview pages of the B1131 datasheet.

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Other Datasheets by Sanyo

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Full PDF Text Transcription

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Ordering number:2420B PNP Epitaxial Planar Silicon Transistor 2SB1131 Strobe, High-Current Switching Applications Applications · Strobes, power supplies, relay drivers, lamp drivers. Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Fast switching time.

Published: May 31, 2015 |