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B1165 - 2SB1165

Key Features

  • Low collector-to-emitter saturation voltage.
  • High fT.
  • Excellent linearity of hFE.
  • Fast switching time. Package Dimensions unit:mm 2043A [2SB1165/2SD1722] ( ) : 2SB1165 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
B1166 2SB1166
B1167 2SB1167
B1168 2SB1168
B1118 2SB1118
B1119 2SB1119

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:2046A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1165/2SD1722 50V/5A Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switching time.