B888
Features
- High DC current gain (5000 or greater).
- Large current capacity and wide ASO.
- Low saturation voltage : VCE(sat)=- 0.8V typ.
Package Dimensions unit:mm 2003A
[2SB888]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Allowable Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance
Symbol
Conditions
ICBO IEBO h FE1 h FE2 f T Cob
VCB=- 40V, IE=0 VEB=- 8V, IC=0 VCE=- 2V, IC=- 50m A VCE=- 2V, IC=- 500m A VCE=- 5V, IC=- 50m A VCB=- 10V, f=1MHz
JEDEC : TO-92 EIAJ : SC-43 SANYO : NP
B : Base C : Collector E : Emitter
Ratings
- 80
- 50
- 10
- 0.7
- 2 600 150
- 55 to +150
Unit V V V A A m W ˚C ˚C
Ratings min typ
5000 3000
170 16 max
- 0.1
-...
Representative B888 image (package may vary by manufacturer)