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B919 - 2SB919

Features

  • Low collector-to-emitter saturation voltage : VCE(sat)=.
  • 0.5V (PNP), 0.4V (NPN) max.
  • Large current capacity. Package Dimensions unit:mm 2010C [2SB919/2SD1235] ( ) : 2SB919 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical.

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Part Number Description
B912 2SB912
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Full PDF Text Transcription

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Ordering number:1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications · Large current switching of relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity.
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