BFL4001 - N-Channel Silicon MOSFET

Features

Low ON-resistance.
Avalanche resistance guarantee.
High-speed switching.
10V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc.
1 IDpack.
2 Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition).
3 6.5 A 4.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycl.

Sanyo

Datasheet Details

Part number	BFL4001
Manufacturer	Sanyo
File Size	186.40 KB
Description	N-Channel Silicon MOSFET
Datasheet	BFL4001 Datasheet
Additional preview pages of the BFL4001 datasheet.

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Full PDF Text Transcription

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Ordering number : ENA1638A BFL4001 SANYO Semiconductors DATA SHEET BFL4001 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance • Avalanche resistance guarantee • High-speed switching • 10V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 6.5 A 4.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 13 A Allowable Power Dissipation PD Tc=25°C (SANYO’s ideal heat dissipation condition)*3 2.

Published: Jul 31, 2015 |