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BFL4026 - N-Channel Silicon MOSFET

Features

  • ON-resistance RDS(on)=2.8Ω (typ. ).
  • 10V drive.
  • Input capacitance Ciss=650pF (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc.
  • 1 IDpack.
  • 2 Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition).
  • 3 5A 3.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 10 A.

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Datasheet Details

Part number BFL4026
Manufacturer Sanyo
File Size 232.31 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet BFL4026 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1797A BFL4026 SANYO Semiconductors DATA SHEET BFL4026 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=2.8Ω (typ.) • 10V drive • Input capacitance Ciss=650pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 5A 3.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 10 A Allowable Power Dissipation PD Tc=25°C (SANYO’s ideal heat dissipation condition)*3 2.
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