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BFL4036 - N-Channel Silicon MOSFET

Features

  • ON-resistance RDS(on)=0.4Ω (typ. ).
  • Input capacitance Ciss=1000pF (typ. ).
  • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS IDc.
  • 1 IDpack.
  • 2 IDP PD Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition).
  • 3 PW≤10μs, duty cycle≤1% Tc=25°.

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Datasheet Details

Part number BFL4036
Manufacturer Sanyo
File Size 199.46 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet BFL4036 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1830 BFL4036 SANYO Semiconductors DATA SHEET BFL4036 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=0.4Ω (typ.) • Input capacitance Ciss=1000pF (typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS IDc*1 IDpack*2 IDP PD Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*3 500 V ±30 V 14 A 9.6 A 50 A 2.
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