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C3135 - 2SC3135

Key Features

  • High VEBO.
  • Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1253 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteris.

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📁 Similar Datasheet

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
C3116 2SC3116
C3142 2SC3142
C3144 2SC3144
C3145 2SC3145
C3151 2SC3151

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features · High VEBO. · Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.