Datasheet Summary
Ordering number:EN1430B
NPN Epitaxial Planar Silicon Transistor
2SC3495
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
- AF amplifier, various driver, muting circuit.
Features
- Adoption of FBET process.
- High DC current gain (hFE=500 to 2000).
- High breakdown voltage (VCEO≥100V).
- Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).
- High VEBO (VEBO≥15V).
- Small Cob (Cob=1.8pF typ).
Package Dimensions unit:mm 2003A
[2SC3495]
JEDEC : TO-92 EIAJ : SC-43
Specifications...