C3495 Overview
Key Features
- Adoption of FBET process
- High DC current gain (hFE=500 to 2000)
- High breakdown voltage (VCEO≥100V)
- Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V)
- High VEBO (VEBO≥15V)
- Small Cob (Cob=1.8pF typ). Package Dimensions unit:mm 2003A [2SC3495] JEDEC : TO-92 EIAJ : SC-43 Specifications
