C3576 Description
Ordering number:EN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · LF general-purpose amplifiers, various drivers, muting circuit.
C3576 Key Features
- Adoption of FBET process
- High DC current gain (hFE=800 to 3200)
- Low collector-to-emitter saturation voltage
- High VEBO (VEBO≥15V)