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C3646 - 2SC3646

Key Features

  • Adoption of FBET, MBIT processes.
  • High breakdown voltage and large current capacity.
  • Fast switching time.
  • Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1416 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
C3643 2SC3643
C3644 2SC3644
C3645 2SC3645
C3647 2SC3647
C3648 2SC3648

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1416 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.