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C4124 - 2SC4124

Key Features

  • Adoption of MBIT process.
  • On-chip damper diode.
  • High breakdown voltage (VCBO=1500V).
  • High speed (tf=100ns typ).
  • High reliability (Adoption of HVP process). Package Dimensions unit:mm 2039D [2SC4124] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO.

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Ordering number:EN2962 NPN Triple Diffused Planar Silicon Transistor 2SC4124 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · Adoption of MBIT process. · On-chip damper diode. · High breakdown voltage (VCBO=1500V). · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2039D [2SC4124] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.