Datasheet4U Logo Datasheet4U.com

C4188 - 2SC4188

Datasheet Summary

Features

  • High breakdown voltage : VCEO≥200V.
  • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.3pF typ.
  • Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4188] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collecor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Diss.

📥 Download Datasheet

Datasheet preview – C4188

Datasheet Details

Part number C4188
Manufacturer Sanyo
File Size 155.98 KB
Description 2SC4188
Datasheet download datasheet C4188 Datasheet
Additional preview pages of the C4188 datasheet.

📁 Similar Datasheet

  • C4183 - 2SC4183 (NEC)
  • C4106 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • C4108 - 2SC4108 (Sanyo Semiconductor)
  • C4109 - 2SC4109 (Sanyo Semiconductor)
  • C4111 - Power Transistors (Panasonic Semiconductor)
  • C4112 - Transistor (ETC)
  • C4115 - 2SC4115 (Jiangsu)
  • C4115E - 2SC4115E (Jiangsu Changjiang Electronics)
  • C4115S - 2SC4115S (Jiangsu Changjiang Electronics)
  • C4116 - 2SC4116 (Toshiba)
Other Datasheets by Sanyo

Full PDF Text Transcription

Click to expand full text
Ordering number:ENN2557B NPN Epitaxial Planar Silicon Transistor 2SC4188 Ultrahigh-Definition CRT Display Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.3pF typ. · Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4188] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.
Published: |