C4390
Overview
- Adoption of MBIT process.
- High DC current gain (hFE=800 to 3200).
- Large current capacity (IC=2A).
- Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V).
- High VEBO (VEBO≥15V).
| Part | C4390 |
|---|---|
| Description | 2SC4390 |
| Manufacturer | SANYO |
| Size | 69.44 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| C4393 | Toshiba | 2SC4393 |
| C4394 | Toshiba | 2SC4394 |
| C4391 | Panasonic | Silicon NPN Transistor |