Datasheet4U Logo Datasheet4U.com

C4450 - 2SC4450

Key Features

  • High breakdown voltage.
  • Small Cob.
  • Wide ASO.
  • High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4450] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCE.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
C4452 2SC4452 Sanyo Semicon Device
C4458 2SC4458 Sanyo Semiconductor Corporation
C4459 2SC4459 Sanyo Semicon Device
C4400 OCXO 4-Pin Dip Surface Mount Package Vectron International
C4408 2SC4408 Toshiba Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
C4451 2SC4451
C4453 2SC4453
C4454 2SC4454
C4455 2SC4455
C4457 2SC4457

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN3101 NPN Triple Diffused Planar Silicon Transistor 2SC4450 1500V/5mA High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage. · Small Cob. · Wide ASO. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4450] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 2.