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C4521 - 2SC4521

Key Features

  • Adoption of FBET, MBIT process.
  • Large current capacity.
  • Low collector-to-emitter saturation voltage.
  • Fast switching speed.
  • Small-sized package. Package Dimensions unit:mm 2038A [2SC4521] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction T.

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C4504 2SC4504
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3140A NPN Epitaxial Planar Silicon Transistors 2SC4521 High-Speed Switching Applications Features · Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package. Package Dimensions unit:mm 2038A [2SC4521] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on ceramic board (250mm2× 0.8mm) 0.