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C4650 - 2SC4650

Features

  • High breakdown voltage : VCEO≥200V.
  • Small reverse transfer capacitance and excellent high frequency characteristic: Cre=1.2pF (NPN), 1.7pF (PNP).
  • Adoption of FBET processes. Package Dimensions unit:mm 2064 [2SA1787/2SC4650] ( ) : 2SA1786 E : Emitter C : Collector B : Base Specifications SANYO : NMP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Colle.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency characteristic: Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET processes.
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