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C4675 - 2SC4675

Features

  • Adoption of MBIT process.
  • Low saturation voltage.
  • Fast switching speed.
  • Large current capacity. Package Dimensions unit:mm 2042B [2SC4675] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Jun.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3708 NPN Epitaxial Planar Silicon Transistor 2SC4675 20V/8A Switching Applications Features · Adoption of MBIT process. · Low saturation voltage. · Fast switching speed. · Large current capacity. Package Dimensions unit:mm 2042B [2SC4675] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 2.4 4.
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