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C5155 - 2SC5155

Key Features

  • High current capacity.
  • Adoption of MBIT process.
  • High DC current gain.
  • Low collector-to-emitter saturation voltage.
  • High VEBO. Package Dimensions unit:mm 2045B [2SC5155] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 123 2.3 2.3 0.8 1.6 7.5 1.2 1 : Base 0.5 2 : Collector 3 : Emitter 4 : Collector SANYO : TP [2SC5155] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0~0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collecto.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN4802 NPN Epitaxial Planar Silicon Transistor 2SC5155 Low-Frequency General-Purpose Amplifier, Applications Applications · Various drivers. Features · High current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage. · High VEBO. Package Dimensions unit:mm 2045B [2SC5155] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 123 2.3 2.3 0.8 1.6 7.5 1.2 1 : Base 0.5 2 : Collector 3 : Emitter 4 : Collector SANYO : TP [2SC5155] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0~0.