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C5265 - 2SC5265

Key Features

  • High breakdown voltage (VCBO=1200V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process. Package Dimensions unit:mm 2079B 10.0 3.2 [2SC5265] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.7 14.0 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junc.

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Other Datasheets by SANYO (now Panasonic)

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C5226 2SC5226
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features · High breakdown voltage (VCBO=1200V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2079B 10.0 3.2 [2SC5265] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.7 14.0 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C 2.