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C5502 - 2SC5502

Key Features

  • Low noise : NF=1.1dB typ (f=1GHz).
  • High gain : S21e2=12dB typ (f=1GHz).
  • High cutoff frequency : fT=8GHz typ. Package Dimensions unit:mm 2161 [2SC5502] 0.425 0.65 0.65 0.3 43 0.15 0 to 0.1 0.2 1.25 2.1 12 0.6 0.65 0.5 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC.

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Ordering number:ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ. Package Dimensions unit:mm 2161 [2SC5502] 0.425 0.65 0.65 0.3 43 0.15 0 to 0.1 0.2 1.25 2.1 12 0.6 0.65 0.5 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on a ceramic board (250mm2× 0.