Adoption of MBIT process. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP
PC
Tj Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Cond.
Ordering number : ENA0995
2SC6089
SANYO Semiconductors
DATA SHEET
2SC6089
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
Features
• High speed. • High breakdown voltage (VCBO=1500V). • Adoption of high reliability HVP process. • Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP
PC
Tj Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Parameter www.DataSheet4U.