CPH3248 Datasheet PDF

APPLICATIONS

● NPN Epitaxial Planar Silicon Transistor High-Voltage Switching

APPLICATIONS

DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters.

FEATURES

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● Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). High allowable power dissipation. Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings 120 120 100 6.5 2 3 400 0.9 150 --55 to +150 Unit V V V V A A mA W °C °C

ELECTRICAL CHARACTERISTICS

at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Cu...