Sanyo Electric CPH3313
P-Channel Silicon MOSFET
APPLICATIONS
FEATURES
●●
● Package Dimensions unit : mm 2152A [CPH3313] 0.2 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 2.9 0.4 0.6 0.15 3 0.05 1.6 2.8 1 1.9 2 0.6 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 0.2 Ratings -20 ± 10 --1.6 Unit V V A A W °C °C -6.4 1 150 --55 to +150 Mounted on a ceramic board (900mm2!0.8mm)ELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crs...