Sanyo Electric CPH3355
P-Channel Silicon MOSFET
FEATURES
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● P-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
ON-resistance RDS(on)1=120mΩ(typ.) 4V drive Halogen free compliance SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 --2.5 --10 1 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7015A-004 Product & Package Information● Package : CPH3
● JEITA, JEDEC : SC-59, TO-236, SOT-23
● Minimum Packing Quantity : 3,000 pcs./reel 2.9 0.6 3 0.15 Packing Type: TL 0.2 Marking WM TL 2.8 1.6 0.05 0.6 1 0.95 2 0.4 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Electrical Connection 3 0.9 0.2 1 2 D2210PE TKIM TC-00002536 No. A1905-1/4 Datasheet pdf - LOT No. CPH3355
ELECTRICAL CHARACTERISTICS
at Ta=25°C...