CPH5803
CPH5803 is N-Channel Silicon MOSFET manufactured by SANYO.
Features
Package Dimensions
- posite type with an N-Channel Sillicon MOSFET unit : mm
(MCH3405) and a Schottky Barrier Diode (SBS004M) 2171 contained in one package facilitating high-density mounting. [MOSFET]
- Low ON-resistance.
2.9 54
- Ultrahigh-speed switching.
- 1.8V drive.
[SBD]
- Short reverse recovery time.
- Low forward voltage.
[CPH5803] 0.15
0.6 1.6 0.6 2.8
2 0.4
0.7 0.2 0.9
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode
SANYO : CPH5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Marking : QD
Symbol
VDSS VGSS
ID IDP PD Tch Tstg
VRRM VRSM
IO IFSM
Tj Tstg
Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
±10
°C...
