D2017M Datasheet PDF

FEATURES

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● N-Channel Silicon MOSFET General-Purpose Switching Device

APPLICATIONS

Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications. Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm 2✕0.8mm) 1unit When mounted on ceramic substrate (1000mm 2✕0.8mm) Conditions Ratings 20 ±12 6 40 1.2 1.25 150 --55 to +150 Unit V V A A W W °C °C

ELECTRICAL CHARACTERISTICS

at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS= ±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A 0.5 5 8.5 Ratings min 20 1 ±10 1.3 typ max Unit V μA μA V S Marking : D2017M Continued on next page.