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EC4301C - PicomosFET Series

Key Features

  • Package Dimensions unit : mm 2197 [EC4301C] 0.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 3 0.05 4 0.6 1.0 2 1 0.3 0.05 (Bottom view) 0.3 0.05 0.2 0.05 0.2 1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : E-CSP1008-4 0.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Sym.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7014 EC4301C P-Channel Silicon MOSFET EC4301C Small Signal Switch and Interface Applications Features • • • Package Dimensions unit : mm 2197 [EC4301C] 0.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 3 0.05 4 0.6 1.0 2 1 0.3 0.05 (Bottom view) 0.3 0.05 0.2 0.05 0.2 1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : E-CSP1008-4 0.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.6 Ratings -30 ± 10 --0.1 --0.4 0.