Sanyo Electric EC4401C
N-Channel MOSFET
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2197 [EC4401C] 0.5 0.3 0.05 0.6 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.2 0.05 0.2 3 0.05 4 1.0 2 1 0.3 (Bottom view) 0.05 1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : E-CSP1008-4 0.8 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 30 ± 10 0.15 0.6 0.15 150 --55 to +150 Unit V V A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=100µA VDS=10V,...