Sanyo Electric EC4A01C
N-Channel Silicon Junction FET
| Part No. | EC4A01C |
|---|---|
| Datasheet | EC4A01C Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Silicon Junction FET |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
●● Package Dimensions
●
●
● Ultrasmall (1008 size), thin (0.6mm) leadless package. unit : mm Especially suited for use in audio, telephone capacitor 2184 microphones. Excellent voltage characteristics. Excellent transient characteristics. 0.2 0.05 Adoption of FBET process. 3 0.05 [EC4A01C] 0.5 4 0.6 1.0 2 1 0.3 (Bottom view) 0.3 0.05 0.2 0.05 1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : E-CSP1008-4 0.8 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings -20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS yfs Ciss Crss Conditions IG=-100µA VDS=5V, ID=1µA VDS=5V, VGS=0...
