Sanyo Electric ECH8309
P-Channel Silicon MOSFET
| Part No. | ECH8309 |
|---|---|
| Datasheet | ECH8309 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
●● P-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
1.8V drive. Halogen free compliance. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --12 ±10 --9.5 --40 1.5 150 --55 to +150 Unit V V A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=±8V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--4.5A ID=--4.5A, VGS=--4.5V ID=--2A, VGS=--2.5V ID=--1A, VGS=--1.8V --0.4 9.6 16 12 18 30 16 26 53 Ratings min --12 --10 ±10 --1.3 typ max Unit V μA μA V S mΩ mΩ mΩ Marking : JL Continued on next page.
