Sanyo Electric ECH8401
N-Channel Silicon MOSFET
| Part No. | ECH8401 |
|---|---|
| Datasheet | ECH8401 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
APPLICATIONS
PreliminaryFEATURES
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● Package Dimensions unit : mm 2222 [ECH8401] 0.25 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.15 8 5 2.3 2.8 0.65 2.9 Top View 0.25 1 4 0.9 0.07 Bottom View 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg DataSheet4U.com DataShe Ratings 20 ±12 10 Unit V V A A W °C °C e Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 40 1.6 150 --55 to +150ELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA Ratings min 20 1 ±10 0.5 1.3 typ max Unit V µA µA V Marking : KA Continued on next page.
