Sanyo Electric ECH8652
P-Channel Silicon MOSFET
| Part No. | ECH8652 |
|---|---|
| Datasheet | ECH8652 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
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● General-Purpose Switching Device
APPLICATIONS
Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings --12 ±10 --6 --40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS1 IDSS2 IGSS VGS(off) ⏐yfs⏐ Conditions ID=-1mA, VGS=0V VDS=-8V, VGS=0V VDS=-12V, VGS=0V VGS=±8V, VDS=0V VDS=-6V, ID=-1mA VDS=-6V, ID=-3A --0.4 6.6 11 Ratings min --12 --1 --10 ±10 --1.4 typ max Unit V μA μA μA V S Marking : WX Continued on next page.
