Sanyo Electric ECH8657
N-Channel Silicon MOSFET
FEATURES
●● N-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
4V drive Halogen free compliance SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit When mounted on ceramic substrate (1200mm2×0.8mm) Conditions Ratings 35 ±20 4.5 30 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7011A-001 Product & Package Information● Package : ECH8
● JEITA, JEDEC :● Minimum Packing Quantity : 3,000 pcs./reel Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3 Packing Type : TL Marking TC TL Lot No. 0.25 1 0.65 4 0.3 Electrical Connection 8 7 6 5 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bot t om View 0.07 1 2 3 4 SANYO : ECH8 D2210 TKIM/42810PE TKIM TC-00002338 No.