Datasheet4U Logo Datasheet4U.com

EMH1405 - N-Channel Silicon MOSFET

Key Features

  • ON-resistance RDS(on)1=14mΩ(typ).
  • 4V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings 30 ±20 8.5 34 1.5 1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
EMH1405 N-Channel Power MOSFET ON Semiconductor
EMH1 Digital Transistors JCET
EMH1 NPN 100mA 50V Complex Digital Transistors ROHM
EMH10 dual digital transistors Rohm
EMH10 Digital Transistors JCET

Other Datasheets by SANYO (now Panasonic)

Part Number Description
EMH2308 P-Channel Silicon MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENA1667A EMH1405 SANYO Semiconductors DATA SHEET EMH1405 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=14mΩ(typ) • 4V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings 30 ±20 8.5 34 1.5 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ.) 7045-001 0.2 8 5 0.