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FSS174 - P-Channel Silicon MOSFET

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Ratings Unit --30 V ±20 V --6 A --24 A 1.6 W 150 °C --55 to +150.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN8738 FSS174 SANYO Semiconductors DATA SHEET FSS174 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Ratings Unit --30 V ±20 V --6 A --24 A 1.