Sanyo Electric FTS1003
P-Channel Silicon MOSFET
APPLICATIONS
FEATURES
● Low ON resistance.● 2.5V drive.
● Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS1003] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 0.125 8 : Drain SANYO : TSSOP8 4.5 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 6.4 Ratings –20 ±10 –3 –15 1.3 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (1000mm2×0.8mm)ELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGS...