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FW707 - P-Channel Silicon MOSFET

Features

  • Composite type with a P-channel MOSFET driving from a 4V supply voltage contained in a single package.
  • High-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤100ms) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg Conditions Duty cycle≤.

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    Ordering number : ENA1805 FW707 SANYO Semiconductors DATA SHEET FW707 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Composite type with a P-channel MOSFET driving from a 4V supply voltage contained in a single package • High-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤100ms) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg Conditions Duty cycle≤1% Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.
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