Datasheet4U Logo Datasheet4U.com

FW811 - N-Channel Silicon MOSFET

Datasheet Summary

Features

  • 4V drive.
  • Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD PT Tch Tstg Electrical Characteristics at Ta=25°C Conditions Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate.

📥 Download Datasheet

Datasheet preview – FW811

Datasheet Details

Part number FW811
Manufacturer Sanyo
File Size 192.46 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet FW811 Datasheet
Additional preview pages of the FW811 datasheet.

📁 Similar Datasheet

  • FW801 - One-Cable Transceiver/Arbiter Device (Agere Systems)
  • FW801A - One-Cable Transceiver/Arbiter Device (Agere Systems)
  • FW802A - Two-Cable Transceiver/Arbiter Device (Agere Systems)
  • FW802C - TWO CABLE TRANSCEIVER/ ARBITER DEVICE (Agere Systems)
  • FW803 - Three-Cable Transceiver/Arbiter Device (Agere Systems)
  • FW804 - Four-Cable Transceiver/Arbiter Device (Agere Systems)
  • FW82371 - PCI-TO-ISA / IDE XCELERATOR PIIX4 (Intel Corporation)
  • FW82371EB - PCI-TO-ISA / IDE XCELERATOR (Intel)
  • FW82439HX - PCI set System Controller (Intel)
  • FW82439TX - Extended Temperature PCISET System Controller (Intel)
Other Datasheets by Sanyo
  • FW812 - N-Channel Silicon MOSFET
  • FW813 - N-Channel Silicon MOSFET

Full PDF Text Transcription

Click to expand full text
Ordering number : ENA1570 FW811 SANYO Semiconductors DATA SHEET FW811 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • 4V drive. • Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD PT Tch Tstg Electrical Characteristics at Ta=25°C Conditions Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Ratings 35 ±20 8 9 52 2.0 2.
Published: |