Sanyo Electric J306
P-Channel Silicon MOSFET
| Part No. | J306 |
|---|---|
| Datasheet | J306 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Low ON resistance.● Ultrahigh-speed switching.
● Low-voltage drive.
● Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ306] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Conditions 2.4 Ratings –250 ±30 –3 –12 2.0 25 150 –55 to +150 Unit V V A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yf...
